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2SK2315
Silicon N Channel MOS FET
REJ03G1006-0200 (Previous: ADE-208-1354) Rev.2.00 Sep.07,2005
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R )
3 21 G 4 D 1. Gate 2. Drain 3. Source 4. Drain
S
Note:
Marking is "TY" *UPAK is a trademark of Renesas Technology Corp.
Rev.2.00 Sep. 07, 2005 page 1 of 5
2SK2315
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. When using the alumina ceramic board (12.5 x 20 x 0.7mm) Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 60 20 2 4 2 1 150 -55 to +150 Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss ton toff Min 60 20 -- -- 0.5 -- -- 1.5 -- -- -- -- -- Typ -- -- -- -- -- 0.4 0.35 1.8 173 85 23 21 85 Max -- -- 5 5 1.5 0.6 0.45 -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 0.3 A, VGS = 3 V*3 ID = 1 A, VGS = 4 V*3 ID = 1 A, VDS = 10 V*3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, RL = 30 , VGS = 10 V
Rev.2.00 Sep. 07, 2005 page 2 of 5
2SK2315
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation Pch** (W) (** on the almina ceramic board)
1.6
5 100 s
Maximum Safe Operation Area
ID (A)
2 1 0.5
PW
1
1.2
=
m
s
10
m
Drain Current
s
C D
0.8
0.2 0.1 0.05 0.02 0.01
Operation in this area is limited by RDS(on)
O pe t ra n io
0.4
Ta = 25C 1 shot pulse
0.5 1 2 5 10 20 50 100 200
0
50
100
150
200
0.005 0.2
Ambient Temperature
Ta (C) (
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
5 5 10 V 5V 4V 3.5 V Ta = 25C Pulse Test 3V
Typical Transfer Characteristics
ID (A)
4
ID (A)
4 Tc = 75C 25C -25C
Drain Current
2
2.5 V
Drain Current
3
3
2
1
2V
VGS = 1.5 V
1
VDS = 10 V Pulse Test
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage VDS(on) (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source On State Resistance RDS(on) ()
1.0 Pulse Test Ta = 25C 5 2 1 0.5
Static Drain to Source State Resistance vs. Drain Current
0.8
Ta = 25C 25 Pulse Test
0.6
ID = 2 A
VGS = 3 V
0.4 1A 0.2 0.5 A
10 V 0.2 0.1 0.05 0.1
0
4
8
12
16
20
0.2
0.5
1
2
5
10
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.2.00 Sep. 07, 2005 page 3 of 5
2SK2315
Static Drain to Source on State Resistance vs. Temperature
1.0
Static Drain to Source on State Resistance RDS(on) ()
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs. Drain Current
10 5 2 1 0.5
VDS = 10 V Pulse Test
0.8 ID = 2 A 0.6
VGS = 3 V
Tc = -25C 25C 75C
1A 0.4
0.5 A
0.2 0 -40
VGS = 10 V
1A 0.5 A ID = 2 A
0.2 0.1 0.1
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature
Tc
( (C)
Drain Current ID (A)
Typical Capacitance vs. Drain to Source Voltage
VDS (V)
1000
100
Dynamic Input Characteristics
VDD = 50 V 25 V 10 V VGS
20
Capacitance C (pF)
Ciss 100 Coss
80
16
Drain to Source Voltage
60
VDS
12
Crss 10
VGS = 0 f = 1 MHz
40
ID = 2 A
VDD = 50 V 25 V 10 V
8
20
4 0 10
1 0 10 20 30 40 50
0
2
4
6
8
Drain to Source Voltage
VDS (V)
Gate Charge
Qg (nc)
Switching Characteristics
Reverse Drain Current vs. Source to Drain Voltage
Reverse Drain Current IDR (A)
200
5 Pulse Test 4
Switching Time t (ns)
100
td(off)
50
tf tr
3 10 V 2 5V
VGS = 0
20 10 5
td(on)
2 0.05
VGS = 10 V, PW = 2 s VDD = 30 V, duty < 1 %
1
0.1
0.2
0.5
1
2
5
0
0.4
0.8
1.2
1.6
2.0
Drain Current
ID (A)
Source to Drain Voltage
VSD (V)
Rev.2.00 Sep. 07, 2005 page 4 of 5
Gate to Source Voltage
VGS (V)
2SK2315
Package Dimensions
JEITA Package Code SC-62 RENESAS Code
PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g
Unit: mm
4.5 0.1
1.5 1.5 3.0
Ordering Information
Part Name 2SK2315TYTL-E 2SK2315TYTR-E Quantity 1000 pcs 1000 pcs Taping Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep. 07, 2005 page 5 of 5
0.8 Min
0.44 Max
(0.4)
0.53 Max 0.48 Max
(2.5)
1
2.5 0.1 4.25 Max
0.4
1.8 Max
1.5 0.1 0.44 Max
(1.5)
(0.2)
Sales Strategic Planning Div.
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. placement Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placeme of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's Technology Corp. or a third party. application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas T 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of i improvements publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvement or other reasons. It is distributor for the latest product therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distrib information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. o Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor Techn home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to a evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life ci is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a aerospace, nuclear, or undersea repeater product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. materi 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and lic cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. " Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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